Silicon (Si) power devices have dominated power electronics due to their low cost volume production, excellent starting material quality, ease of fabrication, and proven reliability. Although Si power devices continue to make progress, they are approaching their operational limits primarily due to their relatively low bandgap and critical electric field that result in high conduction and switching losses, and poor high temperature performance. Here's a useful webinar on this subject. Users might also like our Clipper Probe: https://www.saelig.com/MFR00150/MFR00150001.htm
https://www.eeweb.com/lt1-fundamentals-of-sic-and-gan/
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